Surface Micro-Machined Infrared Sensor Using Highly Temperature Stable Interferometric Absorber
AssigneeExcelitas Technologies Singapore Pte. Ltd.
InventorsPiotr Kropelnicki, Radu M. Marinescu, Hermann Karagoezoglu, Kai Liang Chuan
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Abstract
A method for manufacturing a surface machined infrared sensor package is disclosed. A semiconductor wafer is provided having a front side surface and a back side surface. A transistor is defined on the substrate front side. A thin film reflector is implanted in the substrate front side, and a sensor is formed on the semiconductor substrate front side adjacent to the reflector. A thin-film absorber is deposited upon the sensor, wherein the thin-film absorber is substantially parallel to the reflector.
Claims26
A method for manufacturing a surface machined infrared sensor package, comprising the steps of:
- providing a semiconductor substrate having a front side surface and a back side surface;
- defining a transistor on the substrate front side surface;
- implanting a reflector on the substrate front side surface;
- forming a sensor on the substrate front side surface adjacent to the reflector;
- and
- depositing a thin-film absorber upon the sensor,
- wherein the thin-film absorber is substantially parallel to the reflector with the sensor disposed there between.
A surface machined infrared sensor configured to detect a radiation wavelength, comprising:
- a silicon wafer having a front side and a back side;
- a highly doped silicon reflector implanted in the wafer front side;
- an IR sensor having thin-film interferometric absorber disposed parallel to the reflector;
- and
- a front side infrared sensor disposed between the reflector and the absorber.
Dependencies are inferred from the claim text.