US 2016/0079305 A1Published application

Method of manufacturing semiconductor device

AssigneeRenesas Electronics Corporation

InventorsYuki YAMAMOTO, Tomohiro YAMASHITA

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Abstract

To provide a semiconductor device having improved performance and reduce a production cost. The semiconductor device has a plurality of photodiodes placed in array form on the main surface of a semiconductor substrate, a p+ type semiconductor region surrounding each photodiode in plan view, and a plurality of transistors placed between the direction-Y adjacent photodiodes. A method of manufacturing the semiconductor device includes forming the p+ type semiconductor region by implanting a p type impurity into the semiconductor substrate through a mask layer opened at a p+ type semiconductor region formation region and implanting an n type impurity into the semiconductor substrate through the mask layer. In the latter step, in the main surface of the semiconductor substrate, an impurity ion is implanted into a region between photodiode formation regions adjacent in the Y direction but not into a region between the photodiode formation regions adjacent in the X direction.

A method of manufacturing a semiconductor device having a semiconductor substrate, a plurality of photoelectric conversion elements placed in array form in a first direction and a second direction intersecting therewith in a main surface of the semiconductor substrate, a first semiconductor region of a first conductivity type formed in the semiconductor substrate to surround each of the photoelectric conversion elements in plan view, and a plurality of transistors placed between the photoelectric conversion elements adjacent to each other in the second direction in the main surface of the semiconductor substrate, comprising the steps of:

(a) providing the semiconductor substrate;
(b) forming the first semiconductor region with the first conductivity type in the semiconductor substrate;
and
(c) forming the photoelectric conversion elements each having a second semiconductor region of a second conductivity type opposite to the first conductivity type and the transistors in and on the semiconductor substrate, respectively;
wherein the step (b) further comprises the steps of:
(b1) forming, over the semiconductor substrate, a mask layer having an opening portion at a region in which the first semiconductor region is to be formed;
and
(b2) forming the first semiconductor region of the first conductivity type in the semiconductor substrate by ion implantation of an impurity of the first conductivity type into the semiconductor substrate by using the mask layer as an ion implantation preventive mask;
wherein the method further comprises the step of:
(d) carrying out ion implantation of an impurity of the second conductivity type into the semiconductor substrate by using the mask layer as an ion implantation preventive mask;
wherein in the step (d), in the main surface of the semiconductor substrate, ion implantation into a first region corresponding to a region between the photoelectric conversion elements adjacent to each other in the second direction is performed but ion implantation into a second region corresponding to a region between the photoelectric conversion elements adjacent to each other in the first direction is not performed.

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Abstract

Claims19