Manufacturing method of electronic device and manufacturing method of semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsShinya Takyu, Hideo Numata, Hiroyuki Okura
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Abstract
A manufacturing method of an electronic device processes a surface of a first wafer, bonds a surface of a second wafer to the processed surface of the first wafer, thins the first wafer by polishing a back surface of the first wafer, the back surface being located on an opposite side of the processed surface, forms a groove along a periphery of the back surface of the thinned first wafer by using a dicing blade, attaches a protective layer to the back surface of the first wafer having the groove, via a bonding layer, and polishes a back surface of the second wafer, the back surface being located on an opposite side of the surface attached to the protective layer.
Claims15
A manufacturing method of an electronic device, comprising:
- processing a surface of a first wafer;
- bonding a surface of a second wafer to the processed surface of the first wafer;
- thinning the first wafer by polishing a back surface of the first wafer, the back surface being located on an opposite side of the processed surface;
- forming a groove along a periphery of the back surface of the thinned first wafer by using a dicing blade;
- attaching a protective layer to the back surface of the first wafer having the groove, via a bonding layer;
- and
- polishing a back surface of the second wafer, the back surface being located on an opposite side of the surface attached to the protective layer.
A manufacturing method of an semiconductor device, comprising:
- processing a surface of a first wafer to form a photoelectric conversion element, a transfer circuit to transfer an electrical signal obtained through photoelectric conversion by using the photoelectric conversion element, an A/D converter to convert the transferred electrical signal into a digital signal, and an output circuit to output the digital signal on the first wafer;
- bonding a surface of a second wafer to the processed surface of the first wafer;
- thinning the first wafer by polishing a back surface of the first wafer, the back surface being located on an opposite side of the processed surface;
- forming a groove along a periphery of the back surface of the thinned first wafer by using a dicing blade;
- attaching a protective layer to the back surface of the first wafer having the groove, via a bonding layer;
- and
- polishing a back surface of the second wafer, the back surface being located on an opposite side of the surface attached to the protective layer.
Dependencies are inferred from the claim text.