Solid-state imaging device, method of manufacturing the same, and electronic apparatus
AssigneeSony Corporation
InventorsKazufumi Watanabe, Yasushi Maruyama
Life of this patent
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Abstract
A solid-state imaging device includes: a pixel region in which a plurality of pixels composed of a photoelectric conversion section and a pixel transistor is arranged; an on-chip color filter; an on-chip microlens; and a multilayer interconnection layer in which a plurality of layers of interconnections is formed through an interlayer insulating film. The solid-state imaging device further includes a light-shielding film formed through an insulating layer in a pixel boundary of a light receiving surface in which the photoelectric conversion section is arranged.
Claims30
An imaging device comprising:
- a semiconductor substrate having a first side as a light incident side and a second side opposite the first side;
- a plurality of photodiodes disposed in the semiconductor substrate;
- a plurality of isolation regions, wherein an isolation region is disposed between adjacent photodiodes;
- an interconnection layer on the second side of the substrate;
- and
- a metallic oxide film disposed on at least a portion of the first side of the semiconductor substrate, wherein the metallic oxide film extends from the first side of the semiconductor substrate to the second side of the semiconductor substrate in at least two areas adjacent to the isolation regions.
An imaging device comprising:
- a semiconductor substrate having a first side as a light incident side and a second side opposite the first side;
- a plurality of photodiodes disposed in the semiconductor substrate;
- a plurality of isolation regions, wherein an isolation region includes a p-type impurity region and disposed between adjacent photodiodes;
- and
- a metallic oxide film disposed on at least a portion of the first side of the semiconductor substrate, wherein the metallic oxide film extends from the first side of the semiconductor substrate to the second side of the semiconductor substrate in at least two areas adjacent to the isolation regions.
Dependencies are inferred from the claim text.