Semiconductor device
AssigneeSK hynix Inc.
InventorsTae Kyung KIM, Tae Gyun KIM
Life of this patent
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Abstract
Provided is a semiconductor device including a plurality of pillar columns, each of the plurality of pillar columns including a plurality of pillars arranged in one direction to be offset from each other, wherein an mth pillar and an (m+1)th pillar, among the plurality of pillars included in each pillar column, are aligned with each other (m is an integer of 0 or more).
Claims20
A semiconductor device comprising:
- a plurality of pillar columns, each of the plurality of pillar columns including a plurality of pillars arranged in a first direction and offset from each other in a second direction crossing the first direction,
- wherein an mth pillar and an (m+1)th pillar, among the plurality of pillars included in each pillar column, are aligned with each other in the first direction, and
- wherein m is an integer of 0 or more.
A semiconductor device comprising a plurality of channel columns, each of the channel columns including a plurality of channel layers arranged in a first direction and offset from each other in a second direction crossing the first direction,
- wherein each of the channel layers comprises a source side channel layer, a drain side channel layer, and a pipe channel layer connecting the source side channel layer and the drain side channel layer, and
- a first channel column and a second channel column overlap each other so that a first source side channel layer of the first channel column and a first source side channel layer of the second channel column are aligned with each other in the first direction, and the second channel column and a third channel column overlap each other so that a first drain side channel layer of the second channel column and a first drain side channel layer of the third channel column are aligned with each other in the first direction.
A semiconductor device comprising a plurality of channel columns, each of the channel columns including channel layers arranged aligned with each other in a first direction, wherein the channel layers, included in each channel column, are divided into groups consisting of 1 to k channel layers (k is an integer of two or more),
- wherein the 1 to k channel layers of each group are spaced apart from each other in a first distance and the groups of each channel column are spaced apart from each other in a second distance larger than the first distance,
- wherein each of the channel layers comprises a source side channel layer, a drain side channel layer, and a pipe channel layer connecting the source side channel layer and the drain side channel layer, and
- source side channel layers of a first channel column and source side channel layers of a second channel column are arranged in the first direction and offset from each other in a second direction crossing the first direction, and drain side channel layers of the second channel column and drain side channel layers of a third channel column are arranged in the first direction and offset from each other in the second direction.
Dependencies are inferred from the claim text.