Double-source semiconductor device
AssigneeSK hynix Inc.
InventorsKi Hong LEE, Seung Ho PYI, Ji Yeon BAEK
Life of this patent
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Abstract
A semiconductor device may include a first source layer, a first insulating layer located over the first source layer, and a first stacked structure located over the first insulating layer. The semiconductor device may include first channel layers passing through the first stacked structure and the first insulating layer. The semiconductor device may include a second source layer including a first region interposed between the first source layer and the first insulating layer and a second region interposed between the first channel layers and the first insulating layer.
Claims13
A method of manufacturing a semiconductor device, the method comprising:
- forming a first sacrificial layer over a first source layer;
- forming a first stacked structure over the first sacrificial layer;
- forming first holes passing through the first stacked structure and the first sacrificial layer;
- forming a first channel layer in each of the first holes and a first memory layer surrounding the first channel layer;
- forming a first slit passing through the first stacked structure and the first sacrificial layer;
- forming a first opening by removing the first sacrificial layer through the first slit;
- partially removing the first memory layer exposed through the first opening to expose the first channel layer;
- and
- forming a second source layer on the first channel layer exposed through the first opening.
Dependencies are inferred from the claim text.