Integrated circuit device and method for manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsYosuke KOMORI, Yasuyoshi HYODO
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Abstract
An integrated circuit device according to one embodiment includes a plurality of first electrode films stacked spaced from each other, a plurality of second electrode films stacked spaced from each other on the plurality of first electrode films and extending in one direction, a semiconductor pillar penetrating the first electrode films and the second electrode films, a memory film provided between the first electrode films and the semiconductor pillar and capable of storing charge, a gate insulating film provided between the second electrode films and the semiconductor pillar, and a spacer film electrically connecting width-direction edges of the plurality of second electrode films to each other.
Claims17
An integrated circuit device comprising:
- a plurality of first electrode films stacked spaced from each other;
- a plurality of second electrode films stacked spaced from each other, on the plurality of first electrode films, and extending in one direction;
- a semiconductor pillar penetrating the first electrode films and the second electrode films;
- a memory film provided between the first electrode films and the semiconductor pillar and capable of storing charge;
- a gate insulating film provided between the second electrode films and the semiconductor pillar;
- and
- a spacer film electrically connecting width-direction edges of the plurality of second electrode films to each other.
A method for manufacturing an integrated circuit device, comprising:
- forming a first stacked body by alternately stacking first electrode films and first insulating films;
- forming a first memory hole in the first stacked body, the first memory hole extending in a stacking direction of the first electrode films and the first insulating films;
- forming a memory film capable of storing charge on an inner surface of the first memory hole;
- embedding a first semiconductor pillar in the first memory hole;
- forming a first slit extending in one direction in the first stacked body;
- embedding a first material in the first slit;
- forming a second stacked body on the first stacked body by alternately stacking second electrode films and second insulating films;
- forming a second memory hole extending in the stacking direction in the second stacked body, the second memory hole communicating with the first memory hole;
- forming a third insulating film on an inner surface of the second memory hole;
- embedding a second semiconductor pillar in the second memory hole;
- forming a second slit extending in the one direction in the second stacked body, the second slit communicating with the first slit;
- depositing a conductive material on an inner surface of the second slit;
- removing a portion of the conductive material deposited on a bottom surface of the second slit;
- removing the first material by applying etching through the second slit;
- and
- embedding an insulating member in the first slit and the second slit.
A method of manufacturing an integrated circuit device, comprising:
- forming a stacked body by alternately stacking electrode films and insulating films;
- forming a slit extending in one direction in the stacked body;
- depositing a conductive material on an inner surface of the slit, and
- removing a portion of the conductive material deposited on a bottom surface of the slit.
Dependencies are inferred from the claim text.