Nonvolatile semiconductor memory device and method of manufacturing the same

A nonvolatile semiconductor memory device comprising:

• a first stacked layer structure stacked in order of a first insulating layer, a first electrode layer, . . . an n-th insulating layer, an n-th electrode layer, and an (n+1)-th insulating layer in a first direction, where n is a natural number;
• an oxide semiconductor layer extending through the first to n-th electrode layers in the first direction;
• a second stacked layer structure provided between the first to n-th electrode layers and the oxide semiconductor layer, and including a charge storage layer which storages charges;
• and
• a area provided in the oxide semiconductor layer, being in contact with at least one of the first to (n+1)-th insulating layers, having a composition ratio of oxygen lower than a composition ratio of oxygen in the oxide semiconductor layer.