Nonvolatile semiconductor memory device and method of manufacturing the same

A method of manufacturing a nonvolatile semiconductor memory device, wherein

• the nonvolatile semiconductor memory device includes a memory string, the memory string being formed to extend in a first direction vertical to a surface of the semiconductor substrate, the memory string being formed by coupling a plurality of memory cells in series, wherein
• the method comprises:
• forming a laminated body by forming a first semiconductor layer on the semiconductor substrate and then alternately laminating a conducting layer to be a word line of the memory cell and an interlayer insulating film;
• forming a trench that passes through the laminated body and reaches the first semiconductor layer;
• forming an isolation film on a sidewall of the trench, the isolation film isolating the conducting layer;
• forming a second semiconductor layer in the trench including a sidewall of the isolation film, the second semiconductor layer having a higher impurity concentration than an impurity concentration of the first semiconductor layer;
• forming a silicide film by depositing a first metal film on an inner wall of the second semiconductor layer and then performing a heat treatment so as to silicidize a part of the silicon film;
• and
• depositing a second metal film along a surface of the silicide film.