Dense arrays and charge storage devices

A memory device comprising at least one memory cell, wherein each memory cell of the memory device comprises:

• a stack including a first dielectric region, a second dielectric region that is spaced from the first dielectric region, and a charge storage region configured to trap electrical charges and contacting the first dielectric region and the second dielectric region;
• a p-doped region comprising a p-doped semiconductor material and contacting a first horizontal surface of the stack;
• and
• an n-doped region comprising an n-doped semiconductor material,
• wherein at least one of the p-doped region and the n-doped region is in physical contact with the first dielectric region.