Semiconductor device and method for manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorMerii INABA
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Abstract
According to one embodiment, a semiconductor device includes a substrate and a multilayer body provided on the substrate. The multilayer body has electrode films and insulating films. The electrode films contain silicon, the insulating films contain silicon oxide. Each of the electrode films and each of the insulating films are alternately stacked. A hole is formed in the multilayer body, and the hole vertically extends in the multilayer body. The electrode films include a first electrode film and a second electrode film located below the first electrode film. Carbon concentration of the first electrode film is higher than carbon concentration of the second electrode film.
Claims17
A semiconductor device comprising:
- a substrate;
- and
- a multilayer body provided on the substrate, the multilayer body including electrode films and insulating films, the electrode films containing silicon, the insulating films containing silicon oxide, each of the electrode films and each of the insulating films being alternately stacked, a hole being formed in the multilayer body, and the hole vertically extending in the multilayer body,
- one of the electrode films including:
- a first electrode film;
- and
- a second electrode film located below the first electrode film, and
- carbon concentration of the first electrode film being higher than carbon concentration of the second electrode film.
A semiconductor device comprising:
- a substrate;
- and
- a multilayer body provided on the substrate, the multilayer body including electrode films and insulating films, the electrode films containing silicon, the insulating films containing silicon oxide, each of the electrode films and each of the insulating films being alternately stacked, a hole being formed in the multilayer body, the hole vertically extending in the multilayer body,
- the electrode films including:
- a first electrode film;
- and
- a second electrode film located below the first electrode film, and
- fluorine concentration of the second electrode film being higher than fluorine concentration of the first electrode film.
A method for manufacturing a semiconductor device, comprising:
- forming a lower multilayer body by alternately performing deposition of silicon and deposition of silicon oxide;
- forming an upper multilayer body by alternately performing deposition of silicon with introduction of carbon and deposition of silicon oxide;
- and
- forming a hole in the upper multilayer body and in the lower multilayer body by etching.
A method for manufacturing a semiconductor device, comprising:
- forming a lower multilayer body by alternately performing deposition of silicon and deposition of silicon oxide;
- forming an upper multilayer body by alternately performing deposition of silicon and deposition of silicon oxide;
- forming a hole in the upper multilayer body by etching with ion implantation of carbon;
- and
- forming a hole in the lower multilayer body by etching.
A method for manufacturing a semiconductor device, comprising:
- forming a lower multilayer body by alternately performing deposition of silicon with introduction of fluorine and deposition of silicon oxide;
- forming an upper multilayer body by alternately performing deposition of silicon and deposition of silicon oxide;
- and
- forming a hole in the upper multilayer body and in the lower multilayer body by etching.
Dependencies are inferred from the claim text.