Pitch-halving integrated circuit process
AssigneeNanya Technology Corporation
InventorsDavid Storrs Pratt, Richard Housley
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AssigneeNanya Technology Corporation
InventorsDavid Storrs Pratt, Richard Housley
Estimating the term…
A pitch-halving IC process is described. Parallel base line patterns are formed over a substrate, each being connected with a hammerhead pattern at a first or second side of the base line patterns, wherein the hammerhead patterns are arranged at the first side and the second side alternately, and the hammerhead patterns at the first or second side are arranged in a staggered manner. The above patterns are trimmed. A spacer is formed on the sidewalls of each base line pattern and the corresponding hammerhead pattern, including a pair of derivative line patterns, a loop pattern around the hammerhead pattern, and a turning pattern at the other end of the base line pattern. The base line patterns and the hammerhead patterns are removed. A portion of each loop pattern and at least a portion of each turning pattern are removed to disconnect each pair of derivative line patterns.
A pitch-halving integrated circuit (IC) process, comprising:
Dependencies are inferred from the claim text.