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US 2016/0079245 A1Published application
Semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei YAMAZAKI, Keitaro IMAI, Jun KOYAMA
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Abstract
The semiconductor device includes: a transistor having an oxide semiconductor layer; and a logic circuit formed using a semiconductor material other than an oxide semiconductor. One of a source electrode and a drain electrode of the transistor is electrically connected to at least one input of the logic circuit, and at least one input signal is applied to the logic circuit through the transistor. The off-current of the transistor is preferably 1×10−13 A or less.
Claims17
(canceled)
A semiconductor device comprising:
- a first transistor over a substrate, the first transistor comprising a first semiconductor layer including a first channel formation region, a first gate electrode, a first source electrode and a first drain electrode;
- a logic circuit comprising a second transistor over the substrate, the second transistor comprising a second semiconductor layer including a second channel formation region, a second gate electrode, a second source electrode and a second drain electrode;
- and
- a capacitor over the substrate, the capacitor comprising two electrodes,
- wherein one of the first source electrode and the first drain electrode is electrically connected to the second gate electrode of the second transistor, and one of the electrodes of the capacitor, and
- wherein the first semiconductor layer comprises an oxide semiconductor in the first channel formation region.
3 more elements
A semiconductor device comprising:
- a first transistor over a substrate, the first transistor comprising a first semiconductor layer including a first channel formation region, a first gate electrode, a first source electrode and a first drain electrode;
- an insulating layer over the first transistor, the insulating layer including an opening;
- an electrode in the opening, the electrode being in contact with one of the first source electrode and the first drain electrode;
- a logic circuit comprising a second transistor over the substrate, the second transistor comprising a second semiconductor layer including a second channel formation region, a second gate electrode, a second source electrode and a second drain electrode;
- and
- a capacitor over the substrate, the capacitor comprising two electrodes,
- wherein the one of the first source electrode and the first drain electrode is electrically connected to the second gate electrode of the second transistor through the electrode, and is electrically connected to one of the electrodes of the capacitor,
- wherein the first semiconductor layer comprises an oxide semiconductor in the first channel formation region, and
- wherein a top surface of the electrode is effectively in conformity to a top surface of the insulating layer.
6 more elements
A method of forming a semiconductor device comprising the steps of:
- forming a first transistor over a substrate;
- forming a first semiconductor layer including a first channel formation region;
- forming a first gate electrode, a first source electrode and a first drain electrode;
- forming an insulating layer over the first transistor;
- forming an opening in the insulating layer;
- forming an electrode in contact with one of the first source electrode and the first drain electrode in the opening;
- forming a top surface of the electrode to be effectively in conformity to a top surface of the insulating layer by CMP;
- forming a second transistor over the substrate;
- forming a second semiconductor layer including a second channel formation region;
- forming a second gate electrode, a second source electrode and a second drain electrode;
- and
- forming a capacitor over the substrate, the capacitor comprising two electrodes,
- wherein one of the first source electrode and the first drain electrode is electrically connected to the second gate electrode of the second transistor, and one of the electrodes of the capacitor, and
- wherein the first semiconductor layer comprises an oxide semiconductor in the first channel formation region.
11 more elements
Dependencies are inferred from the claim text.