Back to results
US 2016/0079243 A1Published application
Method for manufacturing semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsJU-YOUN KIM, JE-DON KIM
Life of this patent
Estimating the term…
Abstract
A method for manufacturing a semiconductor device is provided. The method includes forming an insulation film including a trench on a substrate, forming a first metal gate film pattern along side and bottom surfaces of the trench, forming a second metal gate film on the first metal gate film pattern and the insulation film, and forming a second metal gate film pattern positioned on the first metal gate film pattern by removing the second metal gate film to expose at least a portion of the insulation film and forming a blocking layer pattern on the second metal gate film pattern by oxidizing an exposed surface of the second metal gate film pattern.
Claims20
A semiconductor device comprising:
- a substrate including a first region and a second region;
- a first gate structure formed in the first region and including:
- a first gate insulation film disposed on the substrate;
- a first high-k film disposed on the first gate insulation film, and including a first sidewall, a second sidewall and a bottom layer that define a first trench;
- a first metal gate film disposed in the first trench, and including a first sidewall, a second sidewall and a bottom layer, the first sidewall of the first metal gate film being disposed on the first sidewall of the first high-k film, the second sidewall of the first metal gate film being disposed on the second sidewall of the first high-k film, the bottom layer of the first metal gate film being disposed on the bottom layer of the first high-k film;
- and
- a second metal gate film filling the first trench;
- and
- a second gate structure formed in the second region and including:
- a second gate insulation film disposed on the substrate;
- a second high-k film disposed on the second gate insulation film, and including a first sidewall, a second sidewall and a bottom layer that define a second trench;
- a third metal gate film disposed in the second trench, and including a first sidewall, a second sidewall and a bottom layer, the first sidewall of the third metal gate film being disposed on the first sidewall of the second high-k film, the second sidewall of the third metal gate film being disposed on the second sidewall of the second high-k film, the bottom layer of the third metal gate film being disposed on the bottom layer of the second high-k film;
- and
- a fourth metal gate film filling the second trench,
- wherein a height of the second metal gate film is greater than a height of the fourth metal gate film.
12 more elements
A semiconductor device comprising:
- a substrate including a first region and a second region;
- a first gate structure formed in the first region and including:
- a first gate insulation film disposed on the substrate;
- a first high-k film disposed on the first gate insulation film, and including a first sidewall, a second sidewall and a bottom layer that define a first trench;
- a first metal gate film disposed in the first trench, and including a first sidewall, a second sidewall and a bottom layer, the first sidewall of the first metal gate film being disposed on the first sidewall of the first high-k film, the second sidewall of the first metal gate film being disposed on the second sidewall of the first high-k film, the bottom layer of the first metal gate film being disposed on the bottom layer of the first high-k film;
- and
- a second metal gate film filling the first trench;
- and
- a second gate structure formed in the second region and including:
- a second gate insulation film disposed on the substrate;
- a second high-k film disposed on the second gate insulation film, and including a first sidewall, a second sidewall and a bottom layer that define a second trench;
- a third metal gate film disposed in the second trench, and including a first sidewall, a second sidewall and a bottom layer, the first sidewall of the third metal gate film being disposed on the first sidewall of the second high-k film, the second sidewall of the third metal gate film being disposed on the second sidewall of the second high-k film, the bottom layer of the third metal gate film being disposed on the bottom layer of the second high-k film;
- and
- a fourth metal gate film filling the second trench,
- wherein a width of the second metal gate film is greater than a width of the fourth metal gate film.
12 more elements
A semiconductor device comprising:
- a substrate including a first region and a second region;
- a first gate structure formed in the first region and including:
- a first gate insulation film disposed on the substrate;
- a U-shaped first high-k film disposed on the first gate insulation film;
- a U-shaped first metal gate film disposed in the U-shaped first high-k film;
- and
- a second metal gate film filling a first trench defined by the U-shaped first high-k film;
- and
- a second gate structure formed in the second region and including:
- a second gate insulation film disposed on the substrate;
- a U-shaped second high-k film disposed on the second gate insulation film;
- a U-shaped third metal gate film disposed in the U-shaped second high-k film;
- and
- a fourth metal gate film filling a second trench defined by the U-shaped second high-k film,
- wherein a thickness of a bottom portion of the U-shaped third metal gate film is greater than a thickness of a bottom portion of the U-shaped first metal gate film.
12 more elements
Dependencies are inferred from the claim text.