Integrated circuit device including blocking insulating layer
AssigneeSamsung Electronics Co., Ltd.
InventorsHyun-jo KIM, Hyung-jong LEE, Ju-youn KIM, Jong-mil YOUN
Life of this patent
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Abstract
An integrated circuit device includes an active area, a gate line extending in a direction across the active area and having a gate uppermost surface of a first level, a source/drain regions, an inter-gate insulating film covering opposite sidewalls of the gate line, a blocking insulating film comprising a first part covering the gate uppermost surface and a second part covering the inter-gate insulating film at a level different from the first level, and a contact plug penetrating the blocking insulating film and the inter-gate insulating film and connected to the source/drain regions.
Claims20
An integrated circuit (IC) device comprising:
- a fin type active area formed on a substrate;
- a gate line extending in a direction across the fin type active area on the fin type active area and having a gate uppermost surface at a first level;
- a pair of source/drain regions formed in the fin type active area at opposite sides of the gate line;
- an inter-gate insulating film covering the pair of source/drain regions and both sidewalls of the gate line;
- a blocking insulating film comprising a first part covering the gate uppermost surface and a second part integrally connected to the first part and covering the inter-gate insulating film at a level that is different from the first level;
- and
- a contact plug penetrating the blocking insulating film and the inter-gate insulating film and connected to one of the pair of source/drain regions.
An integrated circuit (IC) device comprising:
- a gate formed on a substrate and comprising a gate uppermost surface at a first level;
- a pair of source/drain regions formed in the substrate at opposite sides of the gate;
- an inter-gate insulating film covering the pair of source/drain regions and both sidewalls of the gate;
- a blocking insulating film comprising a first part covering the gate uppermost surface and a second part integrally connected to the first part and covering the inter-gate insulating film at a level that is different from the first level;
- and
- a contact plug penetrating the blocking insulating film and the inter-gate insulating film and connected to one of the pair of source/drain regions.
An integrated circuit (IC) device comprising:
- a pair of gates extending in parallel to each other with a first space therebetween on a substrate and each comprising a gate uppermost surface at a first level;
- a source/drain region formed in the substrate between the pair of gates;
- an inter-gate insulating film covering the source/drain region in the first space;
- a blocking insulating film comprising a first part covering the pair of gates and a second part covering the inter-gate insulating film at a level that is different from the first level;
- and
- a contact plug penetrating the blocking insulating film and the inter-gate insulating film and connected to the source/drain region.
Dependencies are inferred from the claim text.