Semiconductor device

Abstract

According to one embodiment, a semiconductor device includes a first semiconductor region, a plurality of second semiconductor regions, a plurality of third semiconductor regions, an isolation region, a first electrode, a second electrode, and a third electrode. The plurality of second semiconductor regions is selectively provided on the first semiconductor region. The second semiconductor region has a first conductivity type. The plurality of third semiconductor regions is selectively provided on the first semiconductor region. Each of the third semiconductor regions is adjacent to each of the second semiconductor regions. The third semiconductor region has a second conductivity type. The isolation region is provided in the first semiconductor region. The isolation region is positioned between the adjacent second semiconductor regions and the adjacent third semiconductor regions. The first electrode is connected to the second semiconductor region and the third semiconductor region which are adjacent to the isolation region.

Dependencies are inferred from the claim text.