High Voltage Semiconductor Power Switching Device

A method of fabricating a three terminal high voltage Darlington bipolar power switching device having a connector terminal, a base terminal having a base bonding pin and an emitter terminal with an emitter pin including the steps of:

• conductive die attaching a single semiconductor chip high voltage Darlington bipolar transistor having a collector, a first base, an inner base, and an emitter, with a substrate as the collector terminal, to a main die pad of a three pin power device package in which the main die pad is also electrically connected to the collector terminal of the switching device;
• conductive die attaching a diode having a cathode and an anode with the cathode as a substrate to the base bonding pin of the base terminal of the three pin power device package;
• bonding the first base of the high voltage Darlington bipolar transistor to the base terminal of the three pin power device package;
• bonding the base of the high voltage Darlington bipolar transistor to the anode of the diode;
• bonding the emitter of the high voltage Darlington bipolar transistor to the emitter pin of the three pin power package;
• and
• subsequent standard moulding and follow on process to complete a device packaging.

A method of fabricating a three terminal high voltage hybrid MOSFET/bipolar transistor power switching device having a collector terminal, a gate bonding terminal with a gate bonding pin and an emitter with an emitter pin, including the steps of:

• conductive die attaching a high voltage MOSFET and a high voltage bipolar transistor having a substrate as a drain and a collector terminal respectively, to a main die pad of a three terminal power device, which serves as the collector terminal for the power switching device;
• conductive die attaching a diode having a cathode and an anode with the cathode as a substrate to the gate bonding pin of the gate terminal of the three terminal power device;
• bonding a gate of the high voltage MOSFET to the gate terminal of the three terminal power device package;
• inter-chip bonding of a source of the high voltage MOSFET to a base of the high voltage bipolar transistor;
• bonding of the source of the high voltage MOSFET and/or a base of the high voltage bipolar transistor to the anode of the diode;
• bonding of an emitter of the high voltage bipolar transistor to the emitter pin of the three pin power;
• and
• subsequent standard moulding and follow on process to complete the device.

A monolithic three terminal high voltage hybrid bipolar MOSFET/bipolar power switching semiconductor integrated circuit having a collector terminal, a gate terminal and an emitter terminal fabricated by a high voltage planer process including:

• a high voltage MOSFET having a body, a gate and a high voltage bipolar transistor, with a substrate having a dopant type as a drain and a collector respectively such that the substrate serves as the collector terminal for the power switching integrated circuit via high doping concentration region of the same type at a back side;
• two semiconductor well regions with an opposite dopant type to the substrate serving as a body and a base region for the high voltage MOSFET and high voltage bipolar transistor, respectively;
• semiconductor electrodes of the same dopant type as the substrate with high doping density inside the body and base regions serving as a source and an emitter for the high voltage MOSFET and high voltage bipolar transistors, respectively;
• poly-silicon thin oxide gate electrodes overlapping the body and the substrate regions serving as the gate for the MOSFET;
• wherein:
• the gate of the high voltage MOSFET serves as the gate terminal for the power switching integrated circuit;
• source of the high voltage MOSFET connecting to the base of the high voltage bipolar transistor;
• the body of the high voltage MOSFET connecting either to the source of the high voltage MOSFET, or as an alternative, to an emitter of the high voltage bipolar transistor;
• the emitter of the high voltage bipolar transistor serving as an emitter terminal for the power switching integrated circuit;
• and
• a diode having an anode and a cathode with the anode connected to the base of the high voltage bipolar transistor and the cathode connected to the gate terminal of the power switching integrated circuit;
• wherein:
• the diode is a diode connected bipolar transistor with the following:
• a collector with a dopant type opposite to the main substrate as a well on the high voltage collector substrate of the high voltage power switching integrated circuit similar to the body of the high voltage MOSFET, or the base of the high voltage bipolar transistor;
• a base inside the collector well with a dopant type opposite from that of the collector well with interconnections to other parts via electrodes similar to the emitter of the high voltage bipolar transistor, or the source of the high voltage MOSFET;
• an emitter, either as semiconductor of the same type as the collector at much higher doping density, or as barrier metal silicide;
• and
• the base and collector having terminals which are connected and serve as the cathode while the emitter serves as the anode of the diode.

A monolithic three terminal high voltage hybrid bipolar MOSFET/bipolar power switching semiconductor integrated circuit having a gate terminal, an emitter terminal and a collector substrate fabricated by high voltage super-junction process including:

• a high voltage MOSFET having a drain and a high voltage bipolar transistor having a collector, a base and an emitter with a substrate as the drain and collector respectively such that the substrate has a dopant type and serves as a collector terminal for the power switching integrated circuit via a high doping density region of the same type at a back side;
• semiconductor well regions with an opposite dopant type to the substrate serving as a body and base regions for the high voltage MOSFET and high voltage bipolar transistor, respectively, with high doping concentration super-junction columns of opposite type of dopant as the main substrate for withstanding a high breakdown voltage;
• semiconductor electrodes of the same dopant type as the substrate with high doping density inside the body and base regions serving as the source and an emitter for the high voltage MOSFET and high voltage bipolar transistor respectively;
• poly-silicon thin oxide gate electrodes overlapping the body and the substrate regions serving as a gate for the MOSFET;
• wherein:
• the gate of the high voltage MOSFET serves as a gate terminal for the power switching integrated circuit;
• a source terminal of the high voltage MOSFET connecting to the base of the high voltage bipolar transistor;
• the body of the high voltage MOSFET connects to the source of the high voltage MOSFET, to the emitter of the high voltage bipolar transistor;
• the emitter of the high voltage bipolar transistor serves as an emitter terminal for the power switching integrated circuit;
• and
• a diode having an anode and a cathode with the anode connected to the base of the high voltage bipolar transistor and the cathode connected to the gate terminal of the power switching integrated circuit;
• wherein
• the diode is a diode connected bipolar transistor with the following:
• a collector with dopant type opposite to the main substrate as a well on the high voltage collector substrate of the high voltage power switching integrated circuit similar to the body of the high voltage MOSFET, or the base of the high voltage bipolar transistor, with high doping concentration super-junction columns of opposite type of dopant of the substrate guarding the collector region for withstanding the high breakdown voltage;
• a base inside the collector well with a dopant type opposite from that of the collector well with interconnections to other parts via electrodes similar to the emitter regions of the high voltage bipolar transistor, or the source of the high voltage MOSFET;
• an emitter, either as semiconductor of the same type as the collector at much higher doping density, or as a barrier metal silicide;
• and
• the base and collector having terminals which are connected and serve as the cathode while the emitter serves as the anode of the diode.

A monolithic three terminal high voltage hybrid bipolar MOSFET/bipolar power switching semiconductor integrated circuit having a collector terminal, a gate terminal and an emitter terminal and fabricated by high voltage semi-super-junction process comprising:

• a high voltage MOSFET having a body, a gate, a source and a drain and a high voltage bipolar transistor, having a base, a collector and an emitter, with a substrate as the drain and the collector, respectively, such that the substrate has a dopant type and serves as the collector terminal for the power switching integrated circuit via a high doping density region of the same type at a back side;
• semiconductor well regions with an opposite dopant type to the substrate serving as the body and base regions for the high voltage MOSFET and high voltage bipolar transistor, respectively, with high doping concentration semi-super-junction columns of opposite type of dopant as a main substrate for withstanding a high breakdown voltage;
• semiconductor electrodes of the same dopant type as the substrate with high doping density inside the body and base regions serving as the source and the emitter for the high voltage MOSFET and high voltage bipolar transistor, respectively;
• poly-silicon thin oxide gate electrodes overlapping the body and the substrate serving as the gate for the MOSFET;
• wherein:
• the gate of the high voltage MOSFET serves as the gate terminal for the power switching integrated circuit;
• the source of the high voltage MOSFET connecting to the base of the high voltage bipolar transistor;
• the body of the high voltage MOSFET connects to the source of the high voltage MOSFET, or to the emitter of the high voltage bipolar transistor;
• the emitter of the high voltage bipolar transistor serving as the emitter terminal for the power switching integrated circuit;
• and
• a diode having an anode and a cathode with the anode connected to the base of the high voltage bipolar transistor and the cathode connected to the gate terminal of the power switching integrated circuit;
• wherein
• the diode is a diode connected bipolar transistor with the following:
• a collector having a region with a dopant type opposite to the main substrate as a well on the high voltage collector substrate of the high voltage power switching integrated circuit similar to the body of the high voltage MOSFET, or the base of the high voltage bipolar transistor, with high doping concentration semi-super-junction columns of opposite type of dopant of the substrate guarding the collector region for withstanding the high breakdown voltage;
• a base inside the collector well with dopant type opposite from that of the collector well with interconnections to other parts via electrodes similar to the emitter regions of the high voltage bipolar transistor, or the source of the high voltage MOSFET;
• an emitter, either as semiconductor of the same type as the collector at much higher doping density, or as barrier metal silicide;
• and
• the base and collector having terminals which are connected and serve as the cathode while the emitter is serving as the anode of the diode.