Semiconductor device

A semiconductor device comprising:

• a first semiconductor region of a first conductivity type;
• a second semiconductor region of a second conductivity type that is adjacent to the first semiconductor region;
• a third semiconductor region of the first conductivity type that is provided on the first semiconductor region, and has a dopant concentration that is lower than a dopant concentration of the first semiconductor region;
• a fourth semiconductor region of the first conductivity type that is provided on the second semiconductor region adjacent to the third semiconductor region, and has a dopant that extends to a level that is deeper than a level of a dopant contained in the third semiconductor region, wherein a dimension of the fourth semiconductor region in a first direction from the first semiconductor region to the second semiconductor region is longer than a dimension of the second semiconductor region in the first direction;
• a fifth semiconductor region of the first conductivity type that is provided on the third semiconductor region and the fourth semiconductor region;
• and
• a sixth semiconductor region of the second conductivity type that is provided on the fifth semiconductor region.

A method of forming a semiconductor device, the method comprising:

• forming a first semiconductor region of a first conductivity type on a substrate;
• forming a second semiconductor region of a second conductivity type adjacent to the first semiconductor region;
• forming a third semiconductor region of the first conductivity type on the first semiconductor region, the third semiconductor region having a dopant concentration that is lower than a dopant concentration of the first semiconductor region;
• forming a fourth semiconductor region of the first conductivity type on the second semiconductor region adjacent to the third semiconductor region, the fourth semiconductor region having a doped region that extends to a level that is deeper than a level of a doped region in the third semiconductor region;
• forming a fifth semiconductor region of the first conductivity type on the third semiconductor region and the fourth semiconductor region;
• and
• forming a sixth semiconductor region of the second conductivity type on the fifth semiconductor region.