Iii-v semiconductor material based ac switch
OwnerGerald Deboy, Gilberto Curatolainventors
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Abstract
A power circuit is described that includes a semiconductor die and a coupling structure. The semiconductor die includes a common substrate and a III-V semiconductor layer formed atop the common substrate. At least one bidirectional switch device is formed at least partially within the III-V semiconductor layer. The at least one bidirectional switch has at least a first load terminal and a second load terminal. The coupling structure is configured to dynamically couple the common substrate of the semiconductor die to a lowest potential out of a first potential of the first load terminal and a second potential of the second load terminal.
Claims25
A power circuit comprising:
- a semiconductor die that includes a common substrate and a III-V semiconductor layer formed atop the common substrate, wherein:
- at least one bidirectional switch device is formed at least partially within the III-V semiconductor layer, and
- the at least one bidirectional switch comprises at least a first load terminal and a second load terminal;
- and
- a coupling structure configured to dynamically couple the common substrate of the semiconductor die to a lowest potential out of a first potential of the first load terminal and a second potential of the second load terminal.
A semiconductor die comprising:
- a common substrate;
- a III-V semiconductor layer formed atop the common substrate;
- a bidirectional switch device formed at least partially within the III-V semiconductor layer, the bidirectional switch device having at least a first load terminal and a second load terminal;
- and
- a coupling structure configured to dynamically couple the common substrate to a lowest potential out of a first potential of the first load terminal and a second potential of the second load terminal.
A method comprising:
- operating a semiconductor die that includes a common substrate and a III-V semiconductor layer formed atop the common substrate, wherein at least one bidirectional switch device is formed at least partially within the III-V semiconductor layer, the at least one bidirectional switch having at least a first load terminal and a second load terminal;
- and
- dynamically coupling the common substrate of the semiconductor die to a lowest potential out of a first potential of the first load terminal and a second potential of the second load terminal.
Dependencies are inferred from the claim text.