US 2016/0079232 A1Published application

Semiconductor device

AssigneeKabushiki Kaisha Toshiba

InventorToru SHONO

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Abstract

A semiconductor device includes a first electrode, a first semiconductor layer of a first dopant type on the first electrode. A first region of the semiconductor device includes a second semiconductor layer of the second dopant type on the first semiconductor layer, a third semiconductor layer of the first dopant type on the second semiconductor layer, and a second electrode extending though the second and third semiconductor layers and inwardly of the first semiconductor layer. A second region of the semiconductor device includes an insulating layer over the first semiconductor layer, a fourth semiconductor layer of the first or second dopant type on the insulating layer, a fifth semiconductor layer of a different dopant type on the insulating layer and surrounding the fourth semiconductor layer, and a sixth semiconductor layer of the same dopant type on the insulation layer and surrounding the fifth semiconductor layer.

Claims20

Dependent claims

A semiconductor device comprising:

a first semiconductor region of a first conductive type;
a first electrode located below the first semiconductor region;
a second semiconductor region of a second conductive type selectively located on the first semiconductor region;
a third semiconductor region of a first conductive type that is selectively located on the second semiconductor region;
a second electrode located in the first semiconductor region, the second semiconductor region and the third semiconductor region through a first insulation film therebetween;
a first rectifying element located over the first semiconductor region, over a second insulation film therebetween, in an area where the second semiconductor region, the third semiconductor region, the first insulation film, and the second electrode are not located, the first rectifying element having a structure where a fourth semiconductor region and a fifth semiconductor region having a conductive type different from the fourth semiconductor region are alternately disposed;
a second rectifying element located over the first semiconductor region, through the second insulation film, in an area where the second semiconductor region, the third semiconductor region, the first insulation film, and the second electrode are not provided and the first rectifying element is not provided, the second rectifying element having a structure where a sixth semiconductor region and a seventh semiconductor region having a conductive type different from the sixth semiconductor region are alternately disposed;
a third electrode located over the first semiconductor region, is electrically connected to the third semiconductor region, and electrically connected to any portion of the fourth semiconductor regions of the first rectifying element and to any portion of the sixth semiconductor regions of the second rectifying element;
and
a fourth electrode that is located over the first semiconductor region, is electrically connected to the second electrode, surrounds the third electrode, and is electrically connected to the fourth semiconductor region other than said any portions of the fourth semiconductor regions of the first rectifying element and to the sixth semiconductor region other than the any portions of the sixth semiconductor region of the second rectifying element.

7 more elements

A semiconductor device, comprising;

a first electrode;
a first semiconductor layer of the first dopant type disposed on the first electrode;
in a first region of the semiconductor device:
a second semiconductor layer of the second dopant type disposed on the first semiconductor layer;
a third semiconductor layer of the first dopant type disposed on the second semiconductor layer;
and
a second electrode extending though the second and third semiconductor layers, and inwardly of the first semiconductor layer;
and
in a second region of the semiconductor device:
an insulating layer disposed over the first semiconductor layer;
a fourth semiconductor layer of a first or second dopant type disposed on the insulating layer;
a fifth semiconductor layer of the other of the first and second dopant type disposed on the insulating layer and surrounding the fourth semiconductor layer;
and
a sixth semiconductor layer of the same dopant type as the fourth semiconductor layer disposed on the insulation layer and surrounding the fifth semi conductor layer.

11 more elements

Dependencies are inferred from the claim text.

Facts

Application: 14/635,299Filed 2 Mar 2015
Priority: JP 2014-18553011 Sep 2014
Published: 17 Mar 2016
Term ends: Not estimatedThe source records don’t support an estimate.

Classification13 codes

H10D 89/931
For devices having insulated gate electrodes, e.g. for IGFETs or IGBTs: characterised by the dispositions of the protective arrangements
H10D 8/25
Breakdown diodes, e.g. avalanche diodes: zener diodes
H10D 30/668
Vertical dmos [vdmos] fets: having trench gate electrodes, e.g. UMOS transistors
H10D 62/115
Isolations within a component, i.e. internal isolations: dielectric isolations, e.g. air gaps