US 2016/0079226 A1 · ELECTRONIC DEVICE INCLUDING A DIODE

Abstract

An electronic device can include a substrate, lower and upper semiconductor layers over the substrate, and a doped region at the interface between the lower and upper semiconductor layers. The doped region can have a conductivity type opposite that of a dopant within the lower semiconductor layer. Within the lower semiconductor layer, the dopant can have a dopant concentration profile that has a relatively steeper portion adjacent to the substrate, another relatively steeper portion adjacent to an interface between the first and second semiconductor layers, and a relatively flatter portion between the relative steeper portions. A diode lies at a pn junction where a second dopant concentration profile of the first doped region intersects the relatively flatter portion of the first dopant concentration profile. The electronic device can be formed using different processes described herein.

Claims20

Dependent claims

An electronic device comprising:

a substrate having a first dopant with a first conductivity type;
a first semiconductor layer over the substrate and including a second dopant of the first conductivity type;
a second semiconductor layer over the first semiconductor layer;
and
a first doped region at an interface of and extending into the first and second semiconductor layers, wherein the first doped region has a third dopant with a second conductivity type opposite the first conductivity type,
wherein:
a first dopant concentration profile of the first and second dopants has a first relatively steeper portion adjacent to the substrate, a second relatively steeper portion adjacent to an interface between the first and second semiconductor layers, and a relatively flatter portion between the first and second relative steeper portions;
and
a first diode is formed at a pn junction where a second dopant concentration profile of the third dopant intersects the relatively flatter portion of the first dopant concentration profile.

6 more elements

An electronic device comprising:

a substrate having a first dopant with a first conductivity type;
a first semiconductor layer over the substrate and including a second dopant of the first conductivity type;
a second semiconductor layer over the first semiconductor layer and having a primary surface opposite the first semiconductor layer;
and
a buried doped region at an interface of and extending into the first and second semiconductor layers, wherein the buried doped region has a third dopant with a second conductivity type opposite the first conductivity type,
a first surface doped region having the first conductivity type, wherein the first surface doped region is within the second semiconductor layer at the primary surface and at least a portion of the first surface doped region does not overlie the buried doped region;
and
wherein:
a first dopant concentration profile of the first and second dopants has a first relatively steeper portion adjacent to the substrate, a second relatively steeper portion adjacent to an interface between the first and second semiconductor layers, and a relatively flatter portion between the first and second relative steeper portions;
a first diode is formed at a pn junction where a second dopant concentration profile of the third dopant intersects the relatively flatter portion of the first dopant concentration profile;
and
a second diode is formed at a pn junction that includes the third doped region.

9 more elements

Dependencies are inferred from the claim text.

Electronic device including a diode

Life of this patent

Electronic device including a diode

Life of this patent

Abstract

Claims20