Electrostatic protection device and light-emitting module
AssigneeMurata Manufacturing Co., Ltd.
InventorsKiminori WATANABE, Seiichi SATO, Toshiya WATANABE, Tadayuki OKAWA, Kiyoto ARAKI, Teiji YAMAMOTO
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AssigneeMurata Manufacturing Co., Ltd.
InventorsKiminori WATANABE, Seiichi SATO, Toshiya WATANABE, Tadayuki OKAWA, Kiyoto ARAKI, Teiji YAMAMOTO
Estimating the term…
An electrostatic protection device includes a base member formed of a high-resistance semiconductor material. External connecting lands are formed on a first principal surface of the base member along a first direction with a space therebetween. A diode section is formed in the first principal surface of the base member through a semiconductor forming process. The diode section is formed between formation regions of the external connecting lands along the first direction. A high concentration region is a region that has the same polarity as the base member and contains larger amounts of impurities than the base member. The high concentration region is formed in a ring shape enclosing the diode section in a plan view of the base member.
An electrostatic protection device comprising:
Dependencies are inferred from the claim text.