Semiconductor device, and method for manufacturing semiconductor device

A method for manufacturing a semiconductor device comprising:

• forming a multi-layer wiring on a front surface of a semiconductor substrate;
• forming a front surface electrode electrically connected to the multi-layer wiring on the multi-layer wiring;
• laminating a support substrate on a front surface side of the semiconductor substrate so as to cover the multi-layer wiring and the front surface electrode;
• thinning the semiconductor substrate from a back surface side with the support substrate laminated to the semiconductor substrate;
• forming a through silicon via configured to pass through from the back surface to the front surface of the thinned semiconductor substrate and electrically connect to the multi-layer wiring;
• forming a first back surface wiring on the back surface of the thinned semiconductor substrate to be electrically connected to the through silicon via;
• mounting the first semiconductor chip on the back surface of the thinned semiconductor substrate so that a terminal of the first semiconductor chip is electrically connected to the first back surface wiring;
• stripping the support substrate from the thinned semiconductor substrate;
• and
• individualizing the thinned semiconductor substrate, and obtaining a second semiconductor chip, the first semiconductor chip being mounted on the back surface of the second semiconductor chip.