Manufacturing method for semiconductor device

A manufacturing method for a semiconductor device, comprising:

• preparing a semiconductor wafer including an electrode formed therein, and preparing a first semiconductor chip including a first semiconductor element and a first embedded electrode formed therein, the first embedded electrode being electrically connected with the first semiconductor element;
• electrically connecting one of two ends of the first embedded electrode formed in the first semiconductor chip and the electrode formed in the semiconductor wafer to each other via a first bump;
• before or after connecting the semiconductor wafer and the first semiconductor chip to each other, filling a gap between the semiconductor wafer and the first semiconductor chip, facing each other, with a first insulating resin layer;
• forming a second insulating resin layer on the semiconductor wafer to have a thickness sufficient to embed the first semiconductor chip;
• grinding the second insulating resin layer and the first semiconductor chip to a position slightly before the other end of the first embedded electrode;
• exposing the other end of the first embedded electrode;
• forming a first insulating layer on the first semiconductor chip to cover the other end of the first embedded electrode;
• forming a terminal on the first insulating layer, the terminal being connected with the other end of the first embedded electrode via a contact hole;
• electrically connecting the terminal and a second semiconductor element formed in a second semiconductor chip to each other via a second bump;
• before or after connecting the terminal and the second semiconductor chip, filling a gap between the terminal/the first insulating layer and the second semiconductor chip, facing each other, with a third insulating resin layer;
• forming a fourth insulating resin layer on the first insulating layer to have a thickness sufficient to embed the second semiconductor chip;
• grinding the fourth insulating resin layer and the second semiconductor chip until a thickness of the second semiconductor chip reaches a predetermined thickness;
• forming a second insulating layer on the fourth insulating resin layer and the second semiconductor chip;
• forming an opening in the second insulating layer, the fourth insulating resin layer, the first insulating layer and the second insulating resin layer to expose the electrode formed in the semiconductor wafer;
• filling the opening with a conductive material;
• forming a line on the second insulating layer, the line being connected with the conductive material filling the opening;
• forming a first terminal electrically connected with the line;
• and
• grinding the semiconductor wafer until a thickness of the semiconductor wafer reaches a predetermined thickness.