Semiconductor device and manufacturing method thereof, and mounting method of semiconductor device

A method of manufacturing a semiconductor device, comprising:

• (a) forming a plurality of first wiring having a first thickness over a semiconductor substrate via a first insulating film;
• (b) forming, over the first wiring, a second insulating film that includes an inorganic insulating film and has a first surface;
• (c) forming a flattened second surface by performing CMP processing on the first surface of the second insulating film;
• (d) forming, over the second surface, a third insulating film that includes an inorganic insulating film having a moisture resistance higher than that of the second insulating film;
• and
• (e) forming, over the third insulating film, a plurality of second wiring having a second thickness that is 10 times or more larger than the first thickness.

A mounting method of a semiconductor device, comprising:

• (a) providing a semiconductor wafer which includes a semiconductor substrate having a major surface and a back surface, and having a third thickness, the major surface being formed with a plurality of semiconductor devices,
• each semiconductor device including:
• a first insulating film formed over the semiconductor substrate;
• a plurality of first wiring having a first thickness formed over the first insulating film;
• a second insulating film that includes an inorganic insulating film covering the first wiring and that has a flat surface formed by CMP processing;
• a third insulating film including an inorganic insulating film formed over the flat surface of the second insulating film;
• and
• a plurality of second wiring having a second thickness formed over the third insulating film;
• the third insulating film having a moisture resistance higher than that of the second insulating film,
• the second thickness being 10 times or more larger than the first thickness, and
• the second wiring being located over the third insulating film without an organic insulating film being interposed between itself and the third insulating film;
• (b) forming a thin semiconductor wafer having a fourth thickness smaller than the third thickness by attaching a first tape on the major surface side of the semiconductor wafer and by grinding the back surface of the semiconductor wafer;
• and
• (c) after the first tape is peeled from the thin semiconductor wafer, performing dicing on the major surface side of the thin semiconductor wafer by attaching a second tape to the back surface of the thin semiconductor wafer in order to separate each of the semiconductor devices.