Semiconductor device arrangement and a method for forming a semiconductor device arrangement
AssigneeInfineon Technologies AG
InventorFrancisco Javier Santos Rodriguez
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Abstract
A semiconductor device arrangement includes a semiconductor substrate which includes a semiconductor substrate front side and a semiconductor substrate back side. The semiconductor substrate includes at least one electrical element formed at the semiconductor substrate front side. The semiconductor device arrangement further includes at least one porous semiconductor region formed at the semiconductor substrate back side.
Claims22
A semiconductor device arrangement comprising:
- a semiconductor substrate comprising a semiconductor substrate front side and a semiconductor substrate back side, wherein the semiconductor substrate comprises at least one electrical element formed at the semiconductor substrate front side;
- and
- a plurality of porous semiconductor regions formed at the semiconductor substrate back side.
A method for forming a semiconductor device arrangement, the method comprising:
- thinning at least a portion of the semiconductor wafer to form a thinned wafer portion;
- and
- forming a plurality of porous semiconductor regions in the semiconductor wafer, wherein the semiconductor wafer comprises a support structure laterally surrounding the thinned wafer portion of the semiconductor wafer.
A method for reducing thickness variations in a semiconductor substrate, the method comprising:
- detecting at least one thickness aberration region at a side of a semiconductor substrate;
- forming at least one porous semiconductor region in the at least one thickness aberration region;
- and
- selectively removing at least part of the at least one porous semiconductor region to at least partially remove the at least one thickness aberration region.
Dependencies are inferred from the claim text.