Mark forming method, mark detecting method, and device manufacturing method
AssigneeNikon Corporation
InventorYuji SHIBA
Life of this patent
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Abstract
A mark forming method includes: exposing a wafer with a mask image to form first and second resist marks that have different shapes than one another based on a portion of the mask image; applying a polymer layer that contains a block copolymer to the wafer by spin-coating; forming self-assembled regions in the applied polymer layer; selectively removing a portion of the self-assembled regions; and forming first and second wafer marks on the wafer using the first and second resist marks. This makes it possible to form the marks when forming circuit patterns using self-assembly of a block copolymer.
Claims20
A mark forming method comprising:
- forming a pair of first patterns having a first interval and a pair of second patterns having a second interval different than the first interval on a substrate;
- applying a block copolymer to the substrate after the first patterns and the second patterns are formed;
- applying a self-assembly treatment to the applied block copolymer;
- and
- forming a mark between the pair of first patterns and/or between the pair of second patterns after the self-assembly treatment.
A mark forming method comprising:
- forming a pair of first patterns having a first interval and a pair of second patterns having a second interval different than the first interval on a substrate;
- applying a block copolymer to the substrate after the first patterns and the second patterns are formed;
- applying a self-assembly treatment to the applied block copolymer;
- and
- forming a mark between the pair of first patterns and forming a mark between the pair of second patterns, after the self-assembly treatment.
A mark forming method, comprising:
- exposing a region, of a substrate, including a mark formation region with a mask image to form a first mark and a second mark in the mark formation region based on a first portion of the mask image, the first mark and the second mark having shapes different than one another;
- applying a polymer layer containing a block copolymer to the region including the mark formation region;
- forming self-assembled regions in at least a portion of the applied polymer layer;
- selectively removing a portion of the formed self-assembled regions;
- forming a first positioning mark in the mark formation region of the substrate using the first mark;
- and
- forming a second positioning mark in the mark formation region of the substrate using the second mark.
Dependencies are inferred from the claim text.