Semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsAtsunobu ISOBAYASHI, Masayuki KITAMURA, Yuichi YAMAZAKI, Akihiro KAJITA, Tatsuro SAITO, Taishi ISHIKURA, Atsuko SAKATA, Tadashi SAKAI, Makoto WADA
Life of this patent
Estimating the term…
Abstract
According to one embodiment, a method of manufacturing a semiconductor device, the method includes forming a first film having a first melting point, forming a pattern of a second film on an upper surface of the first film, the second film having a second melting point lower than the first melting point, and forming a graphene film on the upper surface of the first film, the graphene film being formed from a side surface of the pattern of the second film.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- forming a first film having a first melting point;
- forming a pattern of a second film on an upper surface of the first film, the second film having a second melting point lower than the first melting point;
- and
- forming a graphene film on the upper surface of the first film, the graphene film being formed from a side surface of the pattern of the second film.
A semiconductor device comprising:
- a first film having a first melting point;
- a second film provided on an upper surface of the first film, the second film having a second melting point lower than the first melting point;
- and
- a graphene film provided on the upper surface of the first film, the graphene film being in contact with a side surface of the second film.
Dependencies are inferred from the claim text.