Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorYu-Cheng Tung
Life of this patent
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Abstract
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming an ultra low-k (ULK) dielectric layer on the substrate; forming a hard mask on the ULK dielectric layer; forming an opening in the hard mask and the ULK dielectric layer; forming a conductive layer in the opening and on the hard mask; planarizing the conductive layer; and removing the hard mask to expose the ULK dielectric layer so that the top surface of the ULK dielectric layer is lower than the top surface of the conductive layer.
Claims20
A method for fabricating semiconductor device, comprising:
- providing a substrate;
- forming an ultra low-k (ULK) dielectric layer on the substrate;
- forming a hard mask on the ULK dielectric layer;
- forming an opening in the hard mask and the ULK dielectric layer;
- forming a conductive layer in the opening and on the hard mask;
- planarizing the conductive layer;
- and
- removing the hard mask to expose the ULK dielectric layer so that the top surface of the ULK dielectric layer is lower than the top surface of the conductive layer.
A semiconductor device, comprising:
- a substrate;
- an ULK dielectric layer on the substrate;
- a conductive layer embedded in the ULK dielectric layer, wherein the top surface of the ULK dielectric layer is lower than the top surface of the conductive layer;
- a metal layer on the conductive layer;
- and
- a cap layer on the conductive layer while contacting the ULK dielectric layer directly, wherein the top surface of the cap layer on the ULK dielectric layer is higher than the top surface of the metal layer.
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Dependencies are inferred from the claim text.