Power semiconductor module and method of manufacturing the same

A method for producing a power electronics module comprising

• a first semiconductor device and a second semiconductor device, wherein the module is configured to operate such that, in response to a control signal, a current flowing through one of the semiconductor devices commutates to flow through the other semiconductor device, wherein the method comprises
• forming a lead frame with a cavity for receiving a chip of the first semiconductor device,
• bonding the chip of the first semiconductor device to the cavity,
• forming a first PCB on top of the lead frame and the chip of the first semiconductor device, the first PCB comprising a first electrically conducting path between an electrical contact on a top surface of the first PCB and the chip of the first semiconductor device on a bottom side of the first PCB,
• bonding a chip of the second semiconductor device to the electrical contact on the top surface of the first PCB so that the chips of the first semiconductor device and the second semiconductor device are positioned on top of each other, and,
• before or after the bonding of the chip of the second semiconductor device, mounting a support frame on top of the first PCB, wherein the support frame has a cavity for receiving the chip of the second semiconductor device.