Semiconductor packaging having warpage control and methods of forming same

A method for forming a semiconductor device package comprising:

• providing a first die comprising:
• a plurality of first connectors on a bottom surface of the first die;
• and
• a plurality of second connectors on a top surface of the first die;
• bonding the first plurality of connectors to a top surface of a package substrate;
• forming a molding compound over the top surface of the package substrate, wherein a first portion of the top surface of the package substrate remains exposed after forming the molding compound, wherein the molding compound has a vertical sidewall, and wherein a thickness of the molding compound increases as the molding compound extends laterally away from a sidewall of the first die;
• attaching a retaining ring to the first portion of the top surface of the package substrate, wherein a second portion of the top surface of the package substrate is exposed through a gap between the vertical sidewall of the molding compound and a sidewall of the retaining ring;
• and
• bonding a plurality of second dies to the plurality of second connectors after attaching the retaining ring, the plurality of second connectors electrically coupling the first die to the plurality of second dies.

A method comprising:

• forming a molding compound on a top surface of a package substrate, wherein the molding compound extends along sidewalls of a first die bonded to the top surface of the package substrate;
• after forming the molding compound, attaching a retaining ring to the top surface of the package substrate, wherein the molding compound does not extend between the retaining ring and the package substrate;
• and
• bonding a second die to an opposing surface of the first die as the package substrate using a plurality of connectors, the plurality of connectors being interposed between the first die and the second die, the plurality of connectors electrically coupling the first die to the second die.