Method to co-integrate oppositely strained semiconductor devices on a same substrate
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsNICOLAS LOUBET, SYLVAIN MAITREJEAN, ROMAIN WACQUEZ
Life of this patent
Estimating the term…
Abstract
Methods and structures for forming localized, differently-strained regions in a semiconductor layer on a substrate are described. An initial, unstrained, semiconductor-on-insulator substrate may be processed to form the differently-strained regions in the original semiconductor layer. The differently-strained regions may have opposite types of strain. The strains in the different regions may be formed independently.
Claims38
A method for forming differently strained regions of semiconductor on a substrate, the method comprising:
- forming a first semiconductor layer over a second semiconductor layer, wherein the first semiconductor layer forms under a first strain;
- implanting ions into a first region and not a second region of the second semiconductor layer, wherein the implanted ions amorphize the first region of the second semiconductor layer;
- recrystallizing the first region of the second semiconductor layer to form a second strain in the first region;
- removing the first semiconductor layer;
- forming a third semiconductor layer in contact with the second region and not in contact with the first region, wherein the third semiconductor layer is of a different chemical composition from the second semiconductor layer;
- and
- heating the substrate to condense a chemical component from the third semiconductor layer into the second region of the second semiconductor layer to form a third strain in the second region that is different from the second strain.
A method for forming differently strained regions of semiconductor on a substrate, the method comprising:
- forming a first semiconductor layer over a second semiconductor layer, wherein the first semiconductor layer forms under a first strain;
- implanting ions into a first region and not a second region of the second semiconductor layer, wherein the implanted ions amorphize the first region of the second semiconductor layer and wherein the first region is immediately adjacent to the second region;
- recrystallizing the first region of the second semiconductor layer to form a second strain in the first region;
- thinning the second semiconductor layer after recrystallizing the first region;
- and
- heating the substrate to condense a chemical component into the second region of the second semiconductor layer to form a third strain in the second region that is different from the second strain.
A method for forming differently strained regions of semiconductor on a substrate, the method comprising:
- forming a first semiconductor layer over a second semiconductor layer at a first area of the substrate, wherein the first semiconductor layer forms under a first strain;
- forming a third semiconductor layer over the second semiconductor layer at a second area of the substrate, wherein the third semiconductor layer forms under a second strain;
- implanting ions into a first region of the second semiconductor layer at the first area and into a second region of the second semiconductor layer at the second area, wherein the implanted ions amorphize the first region and second region of the second semiconductor layer;
- and
- recrystallizing the first region and second region of the second semiconductor layer to form a third strain in the first region and a fourth strain in the second region.
38-52. (canceled)
Dependencies are inferred from the claim text.