Semiconductor devices and methods of manufacturing the same

A method of manufacturing a semiconductor device, the method comprising:

• forming a plurality of active fins on a substrate layer to be spaced apart from one another in an active fin direction;
• forming an insulation pattern to fill an opening between the active fins such that a length of a bottom surface of the insulation pattern facing the substrate layer is substantially equal to a length of the insulation pattern at a height substantially the same as upper surfaces of the active fins, in the active fin direction;
• and
• forming a gate structure and a dummy gate structure on the active fins and the insulation pattern, respectively.

A method of manufacturing a semiconductor device, the method comprising:

• providing a substrate having active fins thereon, the active fins being spaced apart from one another in a first direction and a second direction substantially perpendicular to the first direction, and each of the active fins extending in the first direction;
• forming an isolation pattern on the substrate, the isolation pattern partially filling a space between the active fins;
• forming an insulation pattern on the isolation pattern, the insulation pattern enclosing the active fins and comprising a first portion filling a space between the active fins in the first direction and extending in the second direction and a second portion extending in the second direction to be connected to the first portion;
• forming a gate structure on the active fins and the second portion of the insulating pattern, the gate structure extending in the second direction;
• and
• forming a dummy gate structure on the first portion of the insulation pattern, the dummy gate structure extending in the second direction.