Manufacturing method of semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorShingo MASUKO
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Abstract
A method of forming a semiconductor device including a semiconductor substrate having a first surface and a second surface, and having a gallium nitride-containing layer provided on the first surface of the semiconductor substrate includes grinding, polishing, and etching the second surface of the semiconductor substrate of which a thickness is d1, and reducing the thickness of the semiconductor substrate to one-fifth or less of d1.
Claims20
A method of forming a semiconductor device including a semiconductor substrate having a first surface and a second surface, and having a gallium nitride-containing layer provided on the first surface of the semiconductor substrate, comprising:
- grinding, polishing, and etching the second surface of the semiconductor substrate of which a thickness is dl;
- and
- reducing the thickness of the semiconductor substrate to one-fifth or less of dl,
- wherein an amount of polishing is between ½ and 1/50 of an amount of grinding, and an amount of etching is between 1/200 and 1/5000 of the amount of grinding.
A method of forming a semiconductor device, comprising:
- providing a crystalline semiconductor substrate having a first crystal orientation;
- depositing, on a first side of the semiconductor substrate, a crystalline semiconductor layer having a second crystal orientation different from the first crystal orientation;
- grinding away a portion of a second side, opposed to the first side, of the semiconductor substrate using a first abrasive of a first size, and thereby forming grinding traces extending inwardly of the second side of the semiconductor substrate;
- and
- polishing the second side of the semiconductor substrate after the grinding of the second side of the semiconductor substrate and reducing the depth of the grinding traces.
A method of manufacturing a semiconductor device, comprising:
- forming a plurality of semiconductor devices comprising a semiconductor material of a first crystal orientation, and wiring layers connected thereto, on a semiconductor substrate having a second, different, crystal orientation;
- grinding away a surface of the semiconductor substrate on which the plurality of semiconductor devices are not formed;
- and
- removing grooves cut inwardly of the semiconductor substrate during the grinding thereof to reduce the depth of the grooves.
Dependencies are inferred from the claim text.