Semiconductor device and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsShingo MASUKO, Yoshiharu TAKADA, Yasuhiro ISOBE
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Abstract
A semiconductor device includes a semiconductor substrate that has a first surface and a second surface opposite to the first surface, and has a groove or trench extending from the first surface toward the second surface, a bottom of the groove being situated between the first surface and the second surface, and a gallium nitride-containing layer on the first surface of the semiconductor substrate having a trench tapering inwardly along a direction toward the first surface of the semiconductor substrate and connected to the groove.
Claims20
A semiconductor device comprising:
- a semiconductor substrate having a first surface and a second surface opposed to the first surface and a groove formed inwardly of the first surface toward the second surface, the bottom of the groove being situated between the first surface and the second surface;
- and
- a gallium nitride-containing layer on the first surface of the silicon substrate, having a trench that tapers inwardly along a direction toward the semiconductor substrate and is connected to the groove.
A method of manufacturing a semiconductor device comprising:
- etching a gallium nitride-containing layer on a first surface of a semiconductor substrate which has a first surface and an opposed second surface to form a plurality of grooves comprising a first bottom in the gallium nitride-containing layer;
- cutting into the semiconductor substrate through the first bottom to form a second bottom, the second bottom being located between the first surface and the second surface;
- and
- polishing the second surface of the semiconductor substrate to expose the plurality of grooves through the second surface side of the semiconductor substrate, so that the semiconductor substrate and the gallium nitride-containing layer are separated into a plurality of chips.
A gallium nitride containing semiconductor device, comprising:
- a semiconductor substrate having a plurality of intersecting sidewalls and a first hardness;
- a gallium nitride layer on the semiconductor substrate, having a plurality of intersecting sidewalls and a second hardness greater than the first hardness, wherein the sidewalls of the gallium nitride containing layer are tapered outwardly in the depth direction of the gallium nitride containing layer;
- and
- a rounded corner, having an outward taper in the depth direction of the gallium nitride containing layer, at the locations where the sidewalls of the gallium nitride containing layer intersect.
Dependencies are inferred from the claim text.