Method of manufacturing bonded wafer
AssigneeShin-Etsu Han-Dotai Co., Ltd.
InventorsToru ISHIZUKA, Norihiro KOBAYASHI
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Abstract
The present invention provides a method of manufacturing a bonded wafer, including performing RTA under an atmosphere containing hydrogen on a bonded wafer after separating the bond wafer constituting the bonded wafer, and subsequently performing a sacrificial oxidation process to reduce the thickness of the thin film, wherein the RTA is performed under conditions of a retention start temperature of more than 1150° C. and a retention end temperature of 1150° C. or less. The invention can inhibit the BMD density from increasing and sufficiently flatten the surface of a thin film when the thin film of the bonded wafer is flattened and thinned by the combination of the RTA and sacrificial oxidation processes.
Claims5
1-3. (canceled)
A method of manufacturing a bonded wafer, comprising:
- implanting at least one gas ion selected from a hydrogen ion and a rare gas ion into a bond wafer from a surface of the bond wafer to form a layer of the implanted ion;
- bonding the surface from which the ion is implanted into the bond wafer and a surface of a base wafer directly or through an insulator film;
- subsequently
- separating the bond wafer along the layer of the implanted ion to form a bonded wafer having a thin film on the base wafer;
- performing rapid thermal annealing (RTA) under an atmosphere containing hydrogen on the bonded wafer after separating the bond wafer;
- and subsequently
- performing a sacrificial oxidation process to reduce a thickness of the thin film, wherein
- the RTA is performed under conditions of a retention start temperature of more than 1150° C. and a retention end temperature of 1150° C. or less.
Dependencies are inferred from the claim text.