Otp memory cell and fabricating method thereof
AssigneeMagnaChip Semiconductor, Ltd.
InventorSeong-do JEON
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Abstract
A one-time programmable (OTP) memory cell is provided, which includes: a well of a first conductivity type; a gate insulating layer formed on the well and including first and second fuse regions; a gate electrode of a second conductivity type formed on the gate insulating layer, the second conductivity type being opposite in electric charge to the first conductivity type; a junction region of the second conductivity type formed in the well and arranged to surround the first and second fuse regions; and an isolation layer formed in the well between the first fuse region and the second fuse region.
Claims5
A method for forming a one-time programmable (OTP) memory cell, the method comprising:
- forming an isolation layer in a first conductivity type well;
- forming a gate insulating layer and a gate electrode on the well,
- wherein the gate insulating layer comprises a capacitor region, a first fuse region, and a second fuse region;
- and
- exposing an upper portion of the well on which the gate insulating layer and the gate electrode is formed to ions of a second conductivity type to form a junction region that surrounds the gate electrode.
Dependencies are inferred from the claim text.