Electrostatic chuck mechanism, substrate processing method and semiconductor substrate processing apparatus
AssigneeKabushiki Kaisha Toshiba
InventorHiroaki KOBAYASHI
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Abstract
An electrostatic chuck mechanism that adsorbs a semiconductor substrate includes a stage of a flat plate shape, an electrode provided in the stage, and generating an electrostatic force, a gas supply section provided in the stage, supplying gas to an upper surface of the stage, and performing temperature adjustment of a lower surface of the semiconductor substrate, a temperature adjustment section performing temperature adjustment of the gas at the time of adsorbing the semiconductor substrate, and, a substrate vertically moving mechanism provided in the stage, and vertically moving the semiconductor substrate.
Claims7
An electrostatic chuck mechanism that adsorbs a semiconductor substrate, comprising:
- a stage of a flat plate shape;
- an electrode provided in the stage, and generating an electrostatic force,
- a gas supply section provided in the stage, supplying gas to an upper surface of the stage, and performing temperature adjustment of a lower surface of the semiconductor substrate;
- a temperature adjustment section performing temperature adjustment of the gas at the time of adsorbing the semiconductor substrate;
- and
- a substrate vertically moving mechanism provided in the stage, and vertically moving the semiconductor substrate.
A substrate processing method of processing a semiconductor substrate, comprising:
- mounting the semiconductor substrate on a stage of a flat plate shape;
- supplying gas of which temperature is adjusted to a portion between the stage and the semiconductor substrate at the time of adsorbing the semiconductor substrate;
- generating an electrostatic force on the stage, and adsorbing the semiconductor substrate onto the stage;
- and
- performing a predetermined process on the semiconductor substrate that is adsorbed onto the stage.
A semiconductor processing apparatus that performs processing on a semiconductor substrate, comprising:
- a processing container configured to process the semiconductor substrate;
- a semiconductor processing section configured to perform semiconductor processing inside the processing container;
- a stage of a flat plate shape provided inside the processing container;
- an electrode provided in the stage, and generating an electrostatic force;
- a gas supply section provided in the stage, and supplying gas to an upper surface of the stage;
- a temperature adjustment section performing temperature adjustment of the gas at the time of adsorbing the semiconductor substrate;
- and
- a substrate vertically moving mechanism provided in the stage, and vertically moving the semiconductor substrate.
Dependencies are inferred from the claim text.