Wet Clean Process for Cleaning Plasma Processing Chamber Components
AssigneeLam Research Corporation
InventorsArmen Avoyan, Kennet Baylon
Life of this patent
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Abstract
A system and method of cleaning a plasma processing chamber component includes removing the component from the plasma processing chamber, the removed component including a material deposited on the surface of the component. A heated oxidizing solution is applied to the material deposited on the component to oxidize a first portion deposited material. A stripping solution is applied to the component to remove the oxidized first portion of the deposited material. An etching solution is applied to remove a second portion of the deposited material and the cleaned component can be rinsed and dried.
Claims19
A method for cleaning a plasma processing chamber component comprising:
- removing the component to be cleaned from the plasma processing chamber, the removed component including at least one material deposited on the component;
- applying a basic cleaning process to the removed component;
- degreasing the removed component;
- removing the at least one material deposited on the removed component to produce a cleaned component;
- and
- drying the cleaned component.
A method for cleaning a plasma processing chamber component comprising:
- removing the component to be cleaned from the plasma processing chamber, the removed component including at least one material deposited on the component;
- applying a basic cleaning process to the removed component;
- degreasing the removed component;
- removing the at least one material deposited on the removed component to produce a cleaned component including:
- applying a heated oxidizing solution to the at least one material deposited on the removed component to oxidize a first portion of the least one material deposited on the removed component, wherein the oxidizing solution includes a mixture of potassium hydroxide (KOH) and potassium permanganate (KMnO4) in a ratio of between about 5 parts potassium hydroxide (KOH) to about 2 parts potassium permanganate (KMnO4);
- applying a stripping solution to the removed component to remove the oxidized first portion of the least one material from the removed component, wherein the stripping solution includes a mixture of hydrofluoric acid (HF) and nitric acid (HNO3) in a ratio of about 1 part hydrofluoric acid (HF) and about 1 part nitric acid (HNO3);
- and
- applying an etching solution to remove a second portion of the least one material from the removed component, wherein the etching solution includes a mixture of hydrofluoric acid (HF), nitric acid (HNO3) and acetic acid (HAc) in a ratio of about 1 part hydrofluoric acid (HF), about 7.5 parts nitric acid (HNO3) and about 3.7 parts acetic acid (HAc);
- and
- drying the cleaned component.
A plasma processing chamber component, comprising:
- an etched surface, the etched surface being etched to remove at least one material deposited on the plasma processing chamber component wherein etching the etched surface includes:
- applying a heated oxidizing solution to the at least one material deposited on the plasma processing chamber component to oxidize a first portion of the least one material deposited on the plasma processing chamber component, wherein the oxidizing solution includes a mixture of potassium hydroxide (KOH) and potassium permanganate (KMnO4);
- applying a stripping solution to the plasma processing chamber component to remove the oxidized first portion of the least one material from the plasma processing chamber component;
- wherein the stripping solution includes a mixture of hydrofluoric acid (HF) and nitric acid (HNO3);
- and
- applying an etching solution to remove a second portion of the least one material from the plasma processing chamber component, wherein the stripping solution includes a mixture of hydrofluoric acid (HF), nitric acid (HNO3) and acetic acid (HAc);
- and
- drying the cleaned component.
Dependencies are inferred from the claim text.