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AssigneeSh Materials Co., Ltd.
InventorsKaoru HISHIKI, Shunichi KIDOGUCHI, Hiroki NAKAYAMA
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[Object] To provide a substrate for semiconductor element mount that makes it possible to stably produce, in a highly mass-productive manner, surface-mount type semiconductor devices. [Solution] The method for producing substrate for semiconductor element mount is characterized by sequentially passing through the following processes (1) to (7): (1) preparing a base substrate 3 having, on a first metal layer 1, a second metal layer 2 through which a metal layer for instrumentation is hardly diffusible; (2) forming a patterned resist mask layer 4 on the second metal layer of the base substrate; (3) placing a surface of the second metal layer remaining uncovered off the resist mask layer under reprocessing treatment, to form a reprocessed surface; (4) providing the reprocessed surface of the base substrate with an organic film that controls adhesion between the metal layer for instrumentation and the reprocessed surface by a liquid agent containing a component that shows the nature of amphoteric surfactant; (5) forming the metal layer for instrumentation on the reprocessed surface of the base substrate via the organic film; (6) forming, on the metal layer for instrumentation, a semiconductor element mount portion and an electrode terminal portion by electroforming; and (7) removing the resist mask from the second metal layer of the base substrate.
A method for producing a substrate for semiconductor element mount, comprising the steps of:
A method for producing a substrate for semiconductor element mount, comprising the steps of:
A method for producing a substrate for semiconductor element mount, comprising the steps of:
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Dependencies are inferred from the claim text.