Method of forming a semiconductor device and according semiconductor device

A method of forming a semiconductor device, comprising:

• providing a gate structure over an active region of a semiconductor substrate, said gate structure comprising a gate electrode material and sidewall spacers;
• applying a first shaping process to said sidewall spacers for reducing a height of sidewall spacers after source/drain regions are formed within said active region, wherein at least a portion of said sidewall spacers remains on each side of said gate electrode material after said shaping process;
• and
• forming a silicide portion on said shaped gate structure.

A semiconductor device, comprising:

• a gate structure with sidewall spacers and a gate electrode material, wherein said sidewall spacers are disposed on each side of said gate electrode material and are of a substantially triangular shape;
• source/drain regions aligned to said gate structure;
• and
• a silicide region formed on said gate structure;
• wherein sidewalls of said gate electrode material are only partially covered by said sidewall spacers.