Composition and Method Used for Chemical Mechanical Planarization of Metals

A composition for use in removing copper from a surface of a wafer containing the copper laying above a stop layer consisting of:

• hydrogen peroxide;
• about 0.05% to about 5% by weight at least one amino acid selected from the group consisting of aminoacetic acid, serine, glutamine, L-alanine, DL-alanine, iminoacetic acid, asparagine, aspartic acid, valine, sarcosine, and mixtures thereof;
• about 5 ppm to about 700 ppm by weight particulate material selected from the group consisting of fumed silica, colloidal silica, fumed alumina, colloidal alumina, cerium oxide, titanium dioxide, zirconium oxide, polystyrene, polymethyl methacrylate, mica, hydrated aluminum silicate, and mixtures thereof;
• about 0.05% to about 5% by weight a corrosion inhibitor selected from the group consisting of 1,2,3-triazole;
• 1,2,4-triazole;
• 4-amino-4H-1,2,4-triazole;
• benzotriazole;
• 1,2,3-benzotriazole;
• 5-methylbenzotriazole;
• l-hydroxybenzotriazole;
• 4-hydroxybenzotriazole and combinations thereof;
• and
• water;
• wherein the particulate material has a particle size in the range of about 4 nm to about 1000 nm;
• the composition has a pH in a range between about 3.5 and about 9;
• and
• the composition facilitates removal of the copper from the wafer surface while maintaining a rate of removal of copper to stop layer of at least 50:1.

A chemical mechanical planarization (CMP) system for polishing a wafer, comprising

• 1) the wafer having at least one surface comprising copper laying above a stop layer;
• 2) a polishing pad;
• 3) a CMP composition comprising:
• a) an oxidizing agent;
• b) about 0.05% to about 5% by weight at least one amino acid selected from the group consisting of aminoacetic acid, serine, glutamine, L-alanine, DL-alanine, iminoacetic acid, asparagine, aspartic acid, valine, sarcosine, and mixtures thereof;
• c) about 5 ppm to about 700 ppm by weight particulate material selected from the group consisting of fumed silica, colloidal silica, fumed alumina, colloidal alumina, cerium oxide, titanium dioxide, zirconium oxide, polystyrene, polymethyl methacrylate, mica, hydrated aluminum silicate, and mixtures thereof;
• d) about 0.05% to about 5% by weight a corrosion inhibitor selected from the group consisting of 1,2,3-triazole;
• 1,2,4-triazole;
• 4-amino-4H-1,2,4-triazole;
• benzotriazole;
• 1,2,3-benzotriazole;
• 5-methylbenzotriazole;
• l-hydroxybenzotriazole;
• 4-hydroxybenzotriazole and combinations thereof;
• and
• e) water;
• wherein the particulate material has a particle size in the range of about 4 nm to about 1000 nm;
• the composition has a pH in a range between about 3.5 and about 9;
• and
• the composition facilitates removal of the copper from the surface of the wafer while maintaining a rate of removal of copper to stop layer of at least 50:1;
• wherein the copper is in contact with the polishing pad and the CMP composition;
• and the CMP composition facilitates removal of copper while maintaining a rate of removal of copper to stop layer of at least 50:1.