Etching method and storage medium

Abstract

There is provided an etching method, including: disposing a target substrate within a chamber, the target substrate having a first silicon oxide film formed on a surface of the target substrate and a second silicon oxide film formed adjacent to the first silicon oxide film, the first silicon oxide film being formed by an atomic layer deposition method and the second silicon oxide film being formed by a method other than the atomic layer deposition method; and selectively etching the first silicon oxide film with respect to the second silicon oxide film by supplying one selected from the group consisting of HF gas and alcohol gas; HF gas and water vapor; HF gas, F2 gas, and alcohol gas; HF gas, F2 gas, and water vapor, into the chamber.

Dependencies are inferred from the claim text.