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US 2016/0079078 A1Published application
Etching method, method of manufacturing article, and etching solution
AssigneeKabushiki Kaisha Toshiba
InventorYusaku ASANO
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Abstract
An etching method according to an embodiment includes forming a catalyst layer made of a noble metal on a structure made of a semiconductor, and dipping the structure in an etching solution containing hydrofluoric acid, an oxidizer, and an organic additive to remove a portion of the structure that is in contact with the catalyst layer.
Claims19
An etching method comprising:
- forming a catalyst layer made of a noble metal on a structure made of a semiconductor;
- and
- dipping the structure in an etching solution containing hydrofluoric acid, an oxidizer, and an organic additive to remove a portion of the structure that is in contact with the catalyst layer.
An etching solution containing hydrofluoric acid, an oxidizer, and an organic additive.
Dependencies are inferred from the claim text.