Pattern forming method and semiconductor device manufacturing method

A pattern forming method comprising:

• with making a template having a recess/protrusion pattern touch photo-curing resist material supplied onto a first area of a processing object, irradiating light onto the resist material to form a first resist layer on the first area, the first area being located in a center of a surface of the processing object;
• with making a template having a recess/protrusion pattern touch photo-curing resist material supplied onto a second area of the processing object, irradiating light onto the resist material to form a second resist layer on the second area, the second area being located in an outer edge of the surface of the processing object;
• and
• etching the processing object having the first resist layer and the second resist layer formed thereon,
• wherein an amount of light irradiated onto the resist material in forming the first resist layer and an amount of light irradiated onto the resist material in forming the second resist layer are different from each other.

A semiconductor device manufacturing method comprising:

• forming a processing object over a semiconductor substrate;
• making a template having a recess/protrusion pattern touch resist material supplied onto a first area of the processing object to form a first resist layer on the first area;
• after forming the first resist layer, making a template having a recess/protrusion pattern touch resist material supplied onto a second area of the processing object to form a second resist layer on the second area;
• and
• etching the processing object having the first resist layer and the second resist layer formed thereon to form a line-and-space pattern over the semiconductor substrate,
• wherein in forming the first resist layer, the template is kept at a position where a distance between a protrusion of the recess/protrusion pattern and the processing object takes on a first length, and
• in forming the second resist layer, the template is kept at a position where a distance between a protrusion of the recess/protrusion pattern and the processing object takes on a second length different from the first length.