Method of manufacturing semiconductor device and substrate processing apparatus

A method of manufacturing a semiconductor device, comprising forming a film on a substrate by performing a predetermined number of times a cycle including:

• supplying a first process gas to the substrate;
• and
• supplying a second process gas to the substrate,
• wherein the act of supplying a first process gas and the act of supplying a second process gas are performed in a state where the substrate is maintained at a predetermined temperature of room temperature or more and 450 degrees C. or less, and
• a third process gas, which reacts with byproducts produced by a reaction of the first process gas and the second process gas, is supplied to the substrate after at least one of the act of supplying a first process gas and the act of supplying a second process gas.

A substrate processing apparatus, comprising:

• a process chamber configured to accommodate a substrate;
• a heating system configured to heat the substrate;
• a first process gas supply system configured to supply a first process gas to the substrate;
• a second process gas supply system configured to supply a second process gas to the substrate;
• a third process gas supply system configured to supply a third process gas, which reacts with byproducts produced by a reaction of the first process gas and the second process gas, to the substrate;
• and
• a control part configured to control the heating system, the first process gas supply system, the second process gas supply system, and the third process gas supply system,
• wherein the control part is configured such that the act of supplying a first process gas to the substrate accommodated in the process chamber and the act of supplying a second process gas to the substrate are performed a predetermined number of times to form a film on the substrate;
• the act of supplying a first process gas and the act of supplying a second process gas are performed in a state where the substrate is maintained at a predetermined temperature of room temperature or more and 450 degrees C. or less;
• and the third process gas is supplied to the substrate simultaneously with at least one of the act of supplying a first process gas and the act of supplying a second process gas.