Nonvolatile semiconductor storage device and method of manufacturing the same

A nonvolatile semiconductor storage device comprising:

• a stack structure including a plurality of first insulating films and a plurality of first electrode films stacked alternately one above another, the stack structure having a first through hole extending therethrough along a stack direction in which the first insulating films and the first electrode films are stacked;
• a second electrode film provided above the stack structure, the second electrode film having a second through hole extending therethrough in the stack direction and communicating with the first through hole;
• a second insulating film provided above the second electrode film, the second insulating film having a third through hole extending therethrough in the stack direction and communicating with the second through hole;
• a semiconductor film provided along an inner surface of the first through hole and the second through hole;
• a memory film provided between the first electrode film and the semiconductor film;
• and
• a gate insulating film provided between the second electrode film and the semiconductor film;
• the third through hole becoming narrower toward an upper side of the stack direction and wider toward a lower side of the stack direction, and an electrically conductive material connected to the semiconductor film is provided in the third through hole.