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US 2016/0079067 A1Published application
Semiconductor device and fabrication method thereof
AssigneeUnited Microelectronics Corp.
InventorsChin-Cheng Chien, Chun-Yuan Wu, Chih-Chien Liu, Chin-Fu Lin, Teng-Chun Tsai
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Abstract
A semiconductor device including a substrate, a spacer and a high-k dielectric layer having a U-shape profile is provided. The spacer located on the substrate surrounds and defines a trench. The high-k dielectric layer having a U-shape profile is located in the trench, and the high-k dielectric layer having a U-shape profile exposes an upper portion of the sidewalls of the trench.
Claims14
A fabricating method of a semiconductor device, comprising:
- forming an inter layer dielectric layer on a substrate;
- forming a trench in the inter layer dielectric layer;
- forming a high-k dielectric layer having a U-shape profile in the trench;
- and
- recessing the high-k dielectric layer to expose an upper portion of the sidewalls of the trench.
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A fabricating method of the semiconductor device, comprising:
- forming an inter layer dielectric layer on a substrate;
- forming a trench in the inter layer dielectric layer;
- forming a high-k dielectric layer having a U-shape profile in the trench;
- forming a work function metal layer having a U-shape profile on the high-k dielectric layer having a U-shape profile;
- filling a filling material into the trench;
- etching back the filling material to expose the two ends of the work function metal layer and the two ends of the high-k dielectric layer;
- reducing the two ends of the high-k dielectric layer to transform it to a metal layer;
- removing the two ends of the work function metal layer and the metal layer;
- and
- removing the filling material.
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Dependencies are inferred from the claim text.