Semiconductor device and manufacturing method thereof
AssigneeKabushiki Kaisha Toshiba
InventorsYoshiharu TAKADA, Takeshi SHIBATA
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Abstract
A semiconductor device includes a semiconductor region, a first electrode provided on the semiconductor region, a second electrode provided on the semiconductor region adjacent to and spaced from a side of the first electrode, and containing an identical material as the material of the first electrode, a third electrode provided on the semiconductor region in a location between the first electrode and the second electrode, a first insulating film provided between the semiconductor region and the third electrode, and a fourth electrode connected to the third electrode containing the same material as the material of the first electrode and the second electrode.
Claims20
A semiconductor device, comprising:
- a semiconductor region;
- a first electrode provided on the semiconductor region;
- a second electrode provided on the semiconductor region, adjacent and to the side of the first electrode, and comprising a material identical to the material of the first electrode;
- a third electrode provided on the semiconductor region, in a location between the first electrode and the second electrode;
- a first insulating film provided between the semiconductor region and the third electrode;
- and
- a fourth electrode connected to the third electrode, and comprising a material identical to the material of the first electrode and the second electrode.
A manufacturing method of a semiconductor device, comprising:
- selectively forming a third electrode on a first insulating film on a semiconductor region;
- forming a second insulating film on the first insulating film, and on the third electrode;
- forming a first opening in the second insulating film and exposing at least a portion of the third electrode in the opening in the second insulating film, and forming a second opening and a third opening in the second insulating film and the first insulating film and exposing the semiconductor region below the first insulating film and the second insulating film within the openings, the first opening formed between the second opening and the third opening;
- forming an electrode layer in the first opening, in the second opening, in the third opening, and on the second insulating film;
- and
- etching the electrode layer and forming a first electrode connected to the semiconductor region through the second opening, a second electrode connected to the semiconductor region through the third opening, and a fourth electrode connected to the third electrode through the first opening.
A method of forming a semiconductor device, comprising:
- providing a semiconductor substrate;
- depositing, by chemical vapor deposition, a multilayer semiconductor stack on the semiconductor substrate;
- depositing a first insulating film layer over the multilayer semiconductor stack;
- forming a first metal electrode on the first insulating layer;
- depositing a second insulating layer on the first insulating layer and the first metal electrode;
- extending a first opening, a second opening and a third opening through the third insulating layer, the first opening extending onto the first metal electrode, the second and the third openings extending through the second insulating layer and through the first insulating layer and exposing the surface of the multilayer semiconductor stack;
- and
- providing a second metal electrode in the second opening and in contact with the multilayer semiconductor stack, a third metal electrode in the third opening and in contact with the multiplayer semiconductor stack, and a fourth metal electrode in the third opening and in contact with the first metal electrode.
Dependencies are inferred from the claim text.