Methods Of Doping Substrates With ALD
AssigneeApplied Materials, Inc.
InventorsAneesh Nainani, Mathew Abraham, Er-Xuan Ping
Life of this patent
Estimating the term…
Abstract
Provided are methods of doping substrates and making doped semiconductor features. An exemplary method includes providing a substrate having at least one feature having an aspect ratio; depositing a layer of dopants onto the substrate, the layer of dopants having a shape conforming to the at least one feature. A dielectric layer is deposited onto the layer of dopants, the dielectric layer having a shape conforming to the layer of dopants. The dielectric layer is annealed to diffuse the dopants into the substrate.
Claims18
A method of doping a semiconductor feature, the method comprising:
- providing a substrate having at least one feature having an aspect ratio;
- depositing a layer of dopants onto the substrate, wherein the layer of dopants comprises one or more monolayers, and the layer of dopants has a shape conforming to the at least one feature;
- depositing a dielectric layer onto the layer of dopants, the dielectric layer having a shape conforming to the layer of dopants, wherein deposition of the dielectric layer is carried out at a temperature of less than about 300° C.;
- and
- annealing the dielectric layer to diffuse the dopants into the substrate.
The method of claim 9, wherein calculating the number of monolayers to provide a desired dopant density per unit volume is further based on surface orientation in addition to the atomic size of the dopant atom and the surface area/volume ratio, and each monolayer is deposited by a single atomic layer deposition cycle.
A method of doping FinFET transistor, the method comprising
- depositing a layer of dopants onto a substrate;
- depositing a dielectric layer onto the layer of dopants;
- implanting silicon or argon into the dielectric layer prior to annealing the dielectric layer;
- and
- annealing the dielectric to diffuse the dopants into the substrate.
The method of claim 14, wherein the layer of dopants is one or more dopant atoms thick.
The method of claim 14, wherein the deposition of the layer of dopants comprises atomic layer deposition or plasma-enhanced atomic layer deposition.
A method of doping a semiconductor feature, the method comprising:
- providing a substrate having at least one feature having an aspect ratio;
- depositing a layer of dopants onto the substrate, the layer of dopants having a shape conforming to the at least one feature;
- depositing a dielectric layer onto the layer of dopants, the dielectric layer having a shape conforming to the layer of dopants, wherein deposition of the dielectric layer is carried out at a temperature of less than about 300° C.;
- and
- annealing the dielectric layer to diffuse the dopants into the substrate, wherein substantially all of the dopants are diffused into the substrate less than 0.05 nm from the surface.
Dependencies are inferred from the claim text.